Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures
نویسندگان
چکیده
The temperature stability of Ge/Au/Ni/Au ohmic contacts to GaAs nanoheterostructures and Ti/Al/Ni/Au GaN on silicon substrate was investigated. It has been established that optimization the RTA process made it possible obtain with field emission current flow mechanism. thermal for transistors mesa resistors demonstrated threshold behavior heat treatment temperature. optimum parameters minimum contact resistance were defined. Keywords: contact, gallium arsenide, nitride.
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ژورنال
عنوان ژورنال: Fizika i tehnika poluprovodnikov
سال: 2022
ISSN: ['0015-3222', '1726-7315']
DOI: https://doi.org/10.21883/sc.2022.14.53873.9603